SCT10N120 - Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package - STMicroelectronics
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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per unit
area and very good switching performance almost independent of temperature. The
outstanding thermal properties of the SiC material, combined with the device’s housing
in the proprietary HiP247(TM) package, allows designers to use an industry-standard outline
with significantly improved thermal capability. These features render the device
perfectly suitable for high-efficiency and high power density applications.
Key Features
Very tight variation of on-resistance vs. temperature
Slight variation of switching losses vs. temperature
Very high operating temperature capability (TJ
Very fast and robust intrinsic body diode
Low capacitance
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Product Specifications
Description
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247(TM) package
Application Notes
Description
How to fine tune your SiC MOSFET gate driver to minimize losses
The right technology for solar converters
Technical Notes & Articles
Description
Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs
User Manuals
Description
Spice model tutorial for Power MOSFETs
Publications and Collaterals
Description
SiC MOSFETs: The real breakthrough in high-voltage switching
Description
Brochure Power management guide
Conference Papers
Description
Cost benefits of a SiC MOSFET-based high frequency converter
Wide bandgap materials: revolution in automotive power electronics
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HiP247 IN LINE
: Product is in volume production
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local
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ActiveHiP247 IN LINEIndustrialEcopack2
(**) The Material Declaration forms available
may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our
for information on specific devices.
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Active: In Production.
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